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| 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Applications Fast reverse recovery time Low drain-source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 105 ns (typ.) : RDS (ON) = 0.085 (typ.) : |Yfs| = 35 S (typ.) Unit: mm Built-in high-speed free-wheeling diode : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 50 200 250 525 50 25 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA -- -- 2-21F1B Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.5 35.7 Unit C / W C / W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 357 H, RG = 25 , IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK3131 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 100 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A Min -- 30 -- 500 2.4 -- 15 -- -- -- -- Typ. -- -- -- -- -- 0.085 35 11000 2100 4200 105 Max 10 -- 100 -- 3.4 0.11 -- -- -- -- -- pF Unit A V A V V S Turn-on time Switching time Fall time ton -- 160 -- ns tf -- 65 -- Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 50 A -- -- -- -- 245 280 150 130 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- VDR = 25 A, VGS = 0 V IDR = 50 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 105 380 Max 50 200 -1.7 -- -- Unit A A V ns nC Marking Part No. (or abbreviation code) TOSHIBA 2SK3131 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK3131 3 2004-07-06 2SK3131 4 2004-07-06 2SK3131 RG = 25 VDD = 90 V, L = 357 H EAS = 1 BVDSS L I2 2 BVDSS - VDD 5 2004-07-06 2SK3131 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06 |
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